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and materials acceptance
半導体製造装置の持つ基本的なSECS-II通信性能の定義
半導体製造工程から排出されるガス状及び粒子状汚染物質の放出を"使用点"で削減するため考えられる方法，及びそれらをある工程に使用すべき理由
This guideline only defines the zones and volumes for them and the exact placement of them within these zone and volumes are at the direction of the load port suppliers
to be published July 2001
M00100 - SEMI M1 - 鏡面単結晶シリコンウェーハの仕様 Revision:SEMI M1-1014 - Superseded and materials acceptanceSEMI SEMI SOI TTV 1 322216 nm300450 mm1 Polycrystalline siliconSEMI M16 JEITA EM 3601A, SEMI M62, SEMI M61, SEMI M8, SEMI M24, SEMI M38, SEMI M57, SOISEMI M41SEMI M71JEITA EM 3603B, SEMI PV22 SOI 23SI100 mm 1. 10. 11. 10. 21. 111. 121. 13. 1 1. 13. 2JEITA EM 36021. 15JEITA EM 3602 1. 1 2 1. 2 3 1. 5 100mm525m m 1. 6 100mm625m m 1. 7 125mm 1. 8. 1 150mmT 3 1. 8. 2 150mmT 4 1. 9. 1 200mmT 3 1. 9. 2 200mmT 4 1. 9. 3 200mm 1. 10. 1 200mmT 3 1. 10. 2